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9 June 1993 Long-lifetime silicon photoconductive semiconductor switches
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Proceedings Volume 1873, Optically Activated Switching III; (1993)
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
We present the results of experiments aimed at improving the lifetime (longevity) of Si photoconductive semiconductor switches (PCSS). Because damage at the metal-semiconductor interface is the primary damage mechanism in most PCSS, we have tested different contact metallizations. The test setup utilizes: a Nd:YAG laser that operates at 540 Hz with 50 mJ, 10 ns FWHM pulses; a circuit that charges a 50 (Omega) line in 800 ns and discharges it in 20 ns through a 50 (Omega) load; and a lateral switch geometry and 0.25 cm by 0.25 cm switches. The contacts examined include: Cr(diffused)-Cr-Mo-Au, Al(diffused)-Cr-Mo-Au, 31P(ion implanted)-Ti-Pt, Al(diffused)-Pt-Ti-Pd-Au, and edge contacts. In the case of the Cr contacts we have tried thicker Mo or Au layers. For the Al contacts we have tried 1 micrometers and 0.1 micrometers thick depositions. Most contacts survived 107 pulses when switching 32 kV/cm (8 kV over 0.25 cm). The Al diffused went up to 44 kV/cm (1 X 105 pulses). The implanted P switch was switched 2.2 X 107 times at 44 kV/cm and 0.9 X 106 times at 48 kV/cm.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guillermo M. Loubriel, Fred J. Zutavern, Gary J. Denison, Wesley D. Helgeson, Dan L. McLaughlin, Marty W. O'Malley, C. H. Sifford, L. C. Beavis, Carl H. Seager, Arye Rosen, and Richard G. Madonna "Long-lifetime silicon photoconductive semiconductor switches", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993);

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