Monte Carlo modeling of solid state photoswitches

Peter W. Rambo; Jacques Denavit

doi:10.1117/12.146549

9 June 1993 Monte Carlo modeling of solid state photoswitches

Peter W. Rambo; Jacques Denavit

Author Affiliations +

Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146549
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

Large increases in conductivity induced in GaAs and other semiconductors by photoionization allow fast switching by laser light with applications to pulse-power technology and microwave generation. Experiments have shown that under high-field conditions (10 to 50 kV/cm), conductivity may occur either in the linear mode where it is proportional to the absorbed light, in the 'lock-on' mode, where it persists after termination of the laser pulse or in the avalanche mode where multiple carriers are generated. We have assembled a self-consistent Monte Carlo code to study these phenomena and in particular to model hot electron effects, which are expected to be important at high field strengths.

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Peter W. Rambo, Peter W. Rambo, Jacques Denavit, Jacques Denavit, } "Monte Carlo modeling of solid state photoswitches", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146549; https://doi.org/10.1117/12.146549

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