Novel curve-fitting technique for characterization of high-resistivity semiconductor materials

Sridhar Panigrahi; Vishnu K. Lakdawala; Lucy M. Thomas-Harrington; Ralf Peter Brinkmann

doi:10.1117/12.146563

9 June 1993 Novel curve-fitting technique for characterization of high-resistivity semiconductor materials

Sridhar Panigrahi, Vishnu K. Lakdawala, Lucy M. Thomas-Harrington, Ralf Peter Brinkmann

Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146563
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

A novel technique for deep level characterization of high-resistivity semiconductor materials, mainly GaAs has been developed. The technique analyzes the current transients generated by photo induced current transient spectroscopy (PICTS) using a digital data acquisition approach. It is observed that by using the curve fitting technique closely spaced traps within the bandgap could be separately identified and characterized. In addition, the multiple decay time constants obtained from curve fitting consists of sum of exponentials throughout the temperature range centered around a peak obtained from the PICTS spectrum. Each decay time constant (mode) around the specified temperature range represents a trap energy level present in the sample. Since the decay time constants are obtained directly from the transients, trap parameters calculated employing the curve fitting method are more accurate and reliable than those obtained from the two-gated rate window method. The method has been used to characterize high-resistivity materials of interest to optically activated switches and a comparative analysis is reported.

Citation Download Citation

Sridhar Panigrahi, Vishnu K. Lakdawala, Lucy M. Thomas-Harrington, and Ralf Peter Brinkmann "Novel curve-fitting technique for characterization of high-resistivity semiconductor materials", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146563

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KEYWORDS

Gallium arsenide

Temperature metrology

Semiconductor materials

Switching

Switches

Algorithm development

Analytical research

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