9 June 1993 Photoconductive measurements on P-type 6H-SiC
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Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146557
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
The optoelectronic properties of 6-H silicon carbide (6H-SiC) were investigated using lateral and vertical photoconductive switches. We report the measurement of photovoltaic and photoconductive effects for both geometries and at several wavelengths near the 6H-SiC absorption edge. The carrier lifetime in p-type 6H-SiC is also reported. Although the devices possess dark resistances on the order of 10 (Omega) , the switching efficiency of the vertical switches approached 32 percent, while the resistance of the lateral devices could be reduced by 50 percent with 200 (mu) J of laser radiation at (lambda) equals 337 nm. In addition, we measured photoconductivity in the vertical switches with a device static powers dissipation exceeding 11 Watts. Although the device was glowing from the high level of dc power being dissipated, only the switch mount was damaged. 6H-SiC is indeed a high-temperature optoelectronic material.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen E. Saddow, Stephen E. Saddow, Pak Shing Cho, Pak Shing Cho, Julius Goldhar, Julius Goldhar, John Palmour, John Palmour, Chi Hsiang Lee, Chi Hsiang Lee, "Photoconductive measurements on P-type 6H-SiC", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146557; https://doi.org/10.1117/12.146557


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