9 June 1993 Progress in UWB generation with linear silicon switches
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Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146550
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
The use of linear photoconductive switches rather than nonlinear switches for the generation of Ultra-Wide-Band (UWB) pulses provides advantages such as jitter-free operation, low losses, and a reduction of the electrical and mechanical stresses in the switch. These advantages lead to the operation of many switches in series and/or parallel, higher average powers and longer lifetimes. Energy Compression Research Corporation (ECR) has demonstrated an advanced UWB source based on light activated silicon switches (LASS). The UWB source consists of a single LASS device mounted on a low impedance (< 0.5 (Omega) ) microstrip transmission line and a high fidelity impedance transformer connected to a 50 (Omega) coaxial connection. The voltage was measured at low impedance and 50 (Omega) to verify the efficiency and fidelity of the impedance transformer. After a transformation of 110:1 in impedance, the measurement at the end of the transformer verified that pulse rise-time was less than 100 ps and the overall efficiency was 50%. The system was tested up to 10 kV into 50 (Omega) before connector breakdown limited further increase. Larger powers can be radiated if the transformer is directly connected to the antenna.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kendall W. Cardwell, David M. Giorgi, Iain Alexander McIntyre, Paul J. Solone, K. Stuurman, Oved S. F. Zucker, "Progress in UWB generation with linear silicon switches", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146550; https://doi.org/10.1117/12.146550
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