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The use of linear photoconductive switches rather than nonlinear switches for the generation of Ultra-Wide-Band (UWB) pulses provides advantages such as jitter-free operation, low losses, and a reduction of the electrical and mechanical stresses in the switch. These advantages lead to the operation of many switches in series and/or parallel, higher average powers and longer lifetimes. Energy Compression Research Corporation (ECR) has demonstrated an advanced UWB source based on light activated silicon switches (LASS). The UWB source consists of a single LASS device mounted on a low impedance (< 0.5 (Omega) ) microstrip transmission line and a high fidelity impedance transformer connected to a 50 (Omega) coaxial connection. The voltage was measured at low impedance and 50 (Omega) to verify the efficiency and fidelity of the impedance transformer. After a transformation of 110:1 in impedance, the measurement at the end of the transformer verified that pulse rise-time was less than 100 ps and the overall efficiency was 50%. The system was tested up to 10 kV into 50 (Omega) before connector breakdown limited further increase. Larger powers can be radiated if the transformer is directly connected to the antenna.
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Kendall W. Cardwell, David M. Giorgi, Iain Alexander McIntyre, Paul J. Solone, K. Stuurman, Oved S. F. Zucker, "Progress in UWB generation with linear silicon switches," Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146550