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9 June 1993 Tailoring of transport dynamics by recombination center engineering of copper-compensated GaAs
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Proceedings Volume 1873, Optically Activated Switching III; (1993)
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
We report recent subnanosecond photoconductive measurements on a p-i-n device made from a copper-compensated silicon-doped semi-insulating GaAs (GaAs:Si:Cu) substrate. Photoconductivity in this relatively large volume device (0.05 X 0.5 X 1.0 cm3) is generated by extrinsic absorption of a 1-micrometers laser pulse, and optically quenched with a 2-micrometers laser pulse. It is shown experimentally that these large, high- power (multimegawatt) switches have the potential to switch subnanosecond pulses when a copper-compensated GaAs material with suitable fast electron-hole-pair recombination rate is engineered. Test and evaluation of BOSS devices with subnanosecond switching performance is reported. In one case, observation of an electron-hole pair recombination time constant of 0.25 ns is reported in GaAs:Si:Cu irradiated with a neutron dose of 1.8 X 1015 cm-2, a factor of seven faster than previously reported.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael S. Mazzola, David C. Stoudt, and Randy A. Roush "Tailoring of transport dynamics by recombination center engineering of copper-compensated GaAs", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993);

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