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9 June 1993 Thermal ionization model for the sustaining phase of lock-on in GaAs
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Proceedings Volume 1873, Optically Activated Switching III; (1993)
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Thermal ionization of electrons and holes is proposed as an explanation for the sustained phase of lock-on in semi-insulating GaAs. In this mechanism, thermal ionization leads to a current instability which drives the formation of current filaments. The model predicts bistable states: either a highly conductive on-state or weakly conductive off-state. The model predicts that a transition from the off-state to a filamentary-current on-state can be triggered by illumination in agreement with experiments using photoexcitation.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harold P. Hjalmarson, Fred J. Zutavern, Guillermo M. Loubriel, Malcolm T. Buttram, Albert G. Baca, and Louis A. Romero "Thermal ionization model for the sustaining phase of lock-on in GaAs", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993);

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