Fabrication and characterization of thin film resistor arrays for infrared projector applications

Gim T. Ong; Geoffrey K. Reeves; Shawn C. B. Garner; Owen M. Williams

doi:10.1117/12.148075

15 July 1993 Fabrication and characterization of thin film resistor arrays for infrared projector applications

Gim T. Ong, Geoffrey K. Reeves, Shawn C. B. Garner, Owen M. Williams

Proceedings Volume 1874, Infrared and Millimeter-Wave Engineering; (1993) https://doi.org/10.1117/12.148075
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

Thin film resistor technology represents one of the more promising approaches to the problem of providing infrared projection capabilities, particularly when the requirement is for small arrays that operate at high speed at temperatures above 200 degree(s)C. In this paper, the fabrication and characterization of an infrared projector device based on a 2 X 36 thin film resistor array is described. Finite element heat analysis was used during the design phase in order to determine the steady state and transient temperature response of the array. The arrays were fabricated on a polyimide layer on a silicon wafer substrate by using conventional techniques for photolithography, etching, and vacuum deposition. Each resistor element in the array is thermally isolated from its neighboring element by a trench in the polyimide. Characterization of the individual resistors has demonstrated a surface temperature of at least 230 degree(s)C. A transient response of 150 microsecond(s) has been observed for the 10 - 90% rise and fall times.

Citation Download Citation

Gim T. Ong, Geoffrey K. Reeves, Shawn C. B. Garner, and Owen M. Williams "Fabrication and characterization of thin film resistor arrays for infrared projector applications", Proc. SPIE 1874, Infrared and Millimeter-Wave Engineering, (15 July 1993); https://doi.org/10.1117/12.148075

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