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12 July 1993 26.2-million-pixel CCD image sensor
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Abstract
A 26.2 million pixel CCD Imager Sensor has been successfully designed and fabricated. The device uses a full frame architecture with 5,120 X 5,120 pixels organization. With a pitch of 12 microns in both dimensions, the overall image zone is 61.44 mm X 61.44 mm. The charge storage capacity of each photosite is greater than 130,000 electrons and the minimum detectable charge is 50 electrons when correlated double sampling is used. The device is also capable of reduced dark current operation of 60 pA/cm2 when operated in the surface inversion mode. The device has four outputs, each of which can operate up to 12 MHz.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Savvas G. Chamberlain, Stacy R. Kamasz, Shing-Fat Fred Ma, William D. Washkurak, Michael G. Farrier, and P. Tom Jenkins "26.2-million-pixel CCD image sensor", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148596
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