Paper
12 July 1993 4-million-pixel CCD array for scientific applications
Stephen J. Strunk, Pao-Jung Chen, Masoud M. Fattahi, Troy Kaysser, Buon T. Nguyen, Hsin-Fu Tseng, Rusty Winzenread, Mingzhi Wei
Author Affiliations +
Proceedings Volume 1900, Charge-Coupled Devices and Solid State Optical Sensors III; (1993) https://doi.org/10.1117/12.148603
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States
Abstract
A full frame, four million pixel CCD area array has been developed for high performance applications. The device consists of 2048(H) by 2048(V) active elements with four outputs, and is fabricated using a triple poly, buried n-channel CCD process. Design features which enhance array performance include a Multi-Pinned Phase (MPP) pixel design for reduced dark current, low noise output amplifiers, and a phosphor coating to extent the spectral response. Excellent performance is demonstrated with a dynamic range of 93 dB, a read noise of 2.5 electrons (r.m.s.) and dark current of 20 pA cm-2 (25 degree(s)C).
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen J. Strunk, Pao-Jung Chen, Masoud M. Fattahi, Troy Kaysser, Buon T. Nguyen, Hsin-Fu Tseng, Rusty Winzenread, and Mingzhi Wei "4-million-pixel CCD array for scientific applications", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148603
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KEYWORDS
Charge-coupled devices

Electrons

Amplifiers

Clocks

Imaging systems

Silicon

Signal processing

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