Model for random pixel clustering in large-format CCDs

Doug W. Donaghue

doi:10.1117/12.148587

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12 July 1993 Model for random pixel clustering in large-format CCDs

Doug W. Donaghue

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Proceedings Volume 1900, Charge-Coupled Devices and Solid State Optical Sensors III; (1993) https://doi.org/10.1117/12.148587
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States

Abstract

The thermally induced charge (dark current) mechanism in CCD's gives rise to a Poisson distribution of random charge values in each pixel over the device. In the case of low radiant flux and/or quantum efficiency coupled with long integration times this may produce a large number of pixels with values significantly above or below the expected 'average' values. Such pixels in isolation usually pose no significant problem, but may be subject to misinterpretation if randomly aggregated (clustered). In many cases this is of little concern since large quantities of data are captured for subsequent analysis and these random occurrences will be recognized as such. But in the case where cost or complexity mandate 'one-shot' data capture, the question of how often such occurrences may be expected is altogether reasonable. A probabilistic model of such clustering is developed and several scenarios evaluated.

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Doug W. Donaghue "Model for random pixel clustering in large-format CCDs", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148587

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