12 July 1993 New low-noise, random access, radiation-resistant and large-format charge-injection device (CID) imagers
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Abstract
New low-noise CID imagers are being created to meet the demanding requirements of scientific instrumentation, high-speed tracking and nuclear inspection applications. The imagers incorporate new process technology and/or new low-noise architectures to exploit inherent unique CID features including random pixel addressability, true non-destructive pixel readout (NDRO), two-dimensional windowing (sub-array readout), and exceptional resistance to the effects of ionizing radiation. These CID features enable the user to monitor and dynamically adapt application exposure levels in real-time, reduce noise, and read out small sub-arrays of pixels at exceptionally fast rates. Due to their radiation tolerance characteristics, the devices can operate in harsh radiation environments and actually image (detect) the incoming radiation. Device formats and performance features are summarized.
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Joseph Carbone, Joseph Carbone, Jeffrey J. Zarnowski, Jeffrey J. Zarnowski, Frank S. Arnold, Frank S. Arnold, J. Hutton, J. Hutton, } "New low-noise, random access, radiation-resistant and large-format charge-injection device (CID) imagers", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); doi: 10.1117/12.148595; https://doi.org/10.1117/12.148595
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