Paper
25 December 1979 Blazed Holographic Gratings By Selective Etching In Silicon
J. Muller, R. Nietz, U. Unrau
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Abstract
Holographic exposure and selective etching in silicon are combined to fabricate high-precision gratings with nearly arbitrary blaze angle and flat surfaces. The process starts with commercially available silicon wafers, the surfaces of which are oriented at the desired angle to a {1 1 1} plane. Gratings between 0.5μm and 5 μm have been realized with holographic and mask exposure. Efficiencies up to 90% have been measured. Furthermore, simple tools for quick and high-precision alignment of the holographic equipment are described.
© (1979) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Muller, R. Nietz, and U. Unrau "Blazed Holographic Gratings By Selective Etching In Silicon", Proc. SPIE 0192, Interferometry, (25 December 1979); https://doi.org/10.1117/12.957865
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Etching

Silicon

Semiconducting wafers

Holography

Interferometry

Crystals

Optical alignment

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