PROCEEDINGS VOLUME 1924
SPIE'S 1993 SYMPOSIUM ON MICROLITHOGRAPHY | 28-5 FEBRUARY 1993
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
Editor(s): David O. Patterson
SPIE'S 1993 SYMPOSIUM ON MICROLITHOGRAPHY
28-5 February 1993
San Jose, CA, United States
Resists for Manufacturing
Proc. SPIE 1924, Photoresist process latitude optimization for synchrotron x-ray lithography, 0000 (24 June 1993); doi: 10.1117/12.146495
Proc. SPIE 1924, Resist performance in soft x-ray projection lithography, 0000 (24 June 1993); doi: 10.1117/12.146504
Proc. SPIE 1924, Soft x-ray (14 nm) lithography with ultrathin imaging layers and selective electroless metallization, 0000 (24 June 1993); doi: 10.1117/12.146514
Proc. SPIE 1924, Mixed e-beam/optical lithography process for the fabrication of sub-0.25-um poly gates, 0000 (24 June 1993); doi: 10.1117/12.146522
Proc. SPIE 1924, Silylation and dry development of e-beam resist, 0000 (24 June 1993); doi: 10.1117/12.146532
Proc. SPIE 1924, Film life enhancement of chemically amplified electron-beam resists, 0000 (24 June 1993); doi: 10.1117/12.146533
Focused Ion Beams
Proc. SPIE 1924, Chemically assisted focused-ion-beam etching for tungsten x-ray mask repair, 0000 (24 June 1993); doi: 10.1117/12.146534
Proc. SPIE 1924, Fabrication of x-ray masks with 0.15-um level two-dimensional patterns by using highly accurate FIB lithography, 0000 (24 June 1993); doi: 10.1117/12.146535
Proc. SPIE 1924, Process latitude study of focused ion-beam-deposited gold for clear x-ray mask repair, 0000 (24 June 1993); doi: 10.1117/12.146496
Proc. SPIE 1924, 0.25-um x-ray mask repair with focused ion beams, 0000 (24 June 1993); doi: 10.1117/12.146497
Electron-Beam Lithography: Proximity Effects
Proc. SPIE 1924, Proximity effect correction in electron-beam lithography II, 0000 (24 June 1993); doi: 10.1117/12.146498
Proc. SPIE 1924, Effects of electron energy in nanometer-scale lithography, 0000 (24 June 1993); doi: 10.1117/12.146499
Proc. SPIE 1924, Thin silicon nitride films to increase resolution in e-beam lithography, 0000 (24 June 1993); doi: 10.1117/12.146500
Proc. SPIE 1924, Advanced transformational analysis applied to e-beam proximity effect correction, 0000 (24 June 1993); doi: 10.1117/12.146501
Electron-Beam Lithography: Manufacturing
Proc. SPIE 1924, Fully-scaled 0.25-micron bipolar technology using variable shaped electron-beam lithography, 0000 (24 June 1993); doi: 10.1117/12.146502
Proc. SPIE 1924, Highly accurate calibration method of electron-beam cell projection lithography, 0000 (24 June 1993); doi: 10.1117/12.146503
Proc. SPIE 1924, EBES4: performance of a new e-beam reticle generator, 0000 (24 June 1993); doi: 10.1117/12.146505
Proc. SPIE 1924, Suppression of resist heating effect by multiple electron-beam exposure on GaAs substrates, 0000 (24 June 1993); doi: 10.1117/12.146506
Proc. SPIE 1924, Dual exposure (e-beam and i-line) of OCG-895i resist, 0000 (24 June 1993); doi: 10.1117/12.146507
X-Ray Lithography: Integration
Proc. SPIE 1924, Performance of the Hampshire Instruments Model 5000 proximity x-ray stepper, 0000 (24 June 1993); doi: 10.1117/12.146508
Proc. SPIE 1924, Resolution limitation of x-ray proximity lithography--secondary electron and waveguide effects, 0000 (24 June 1993); doi: 10.1117/12.146509
Proc. SPIE 1924, Impact of chuck flatness on wafer distortion and stepper overlay, 0000 (24 June 1993); doi: 10.1117/12.146510
Proc. SPIE 1924, Exposure and resist-process condition dependence of replicated-pattern accuracy in SR lithography, 0000 (24 June 1993); doi: 10.1117/12.146511
Proc. SPIE 1924, Mask-to-wafer alignment using x-ray-printed alignment marks in x-ray lithography, 0000 (24 June 1993); doi: 10.1117/12.146512
Proc. SPIE 1924, Fabrication of high-density SRAM chips using mix-and-match x-ray lithography, 0000 (24 June 1993); doi: 10.1117/12.146513
X-Ray Mask Technology
Proc. SPIE 1924, Absorber roughness effect in XRL image formation, 0000 (24 June 1993); doi: 10.1117/12.146515
X-Ray Lithography: Integration
Proc. SPIE 1924, Effects of illumination system aberrations on proximity XRL images, 0000 (24 June 1993); doi: 10.1117/12.146516
X-Ray Sources
Proc. SPIE 1924, Helios compact synchrotron x-ray source: one year of operation at ALF, 0000 (24 June 1993); doi: 10.1117/12.146517
Proc. SPIE 1924, Image formation in capillary arrays: the Kumakhov lens, 0000 (24 June 1993); doi: 10.1117/12.146518
Proc. SPIE 1924, Characteristics of the spherical pinch plasma radiation source (SPX II) for x-ray, UV, and deep-UV lithography, 0000 (24 June 1993); doi: 10.1117/12.146519
Proc. SPIE 1924, What is required for collimated point-source x-ray lithography to achieve an economically viable throughput?, 0000 (24 June 1993); doi: 10.1117/12.146520
X-Ray Mask Technology
Proc. SPIE 1924, 0.35-um rule, high-density, full-chip x-ray mask patterning, 0000 (24 June 1993); doi: 10.1117/12.146521
Proc. SPIE 1924, Electrical and SEM testing of absorber defectivity in the plated-gold process for x-ray masks, 0000 (24 June 1993); doi: 10.1117/12.146523
Proc. SPIE 1924, Effects of absorber topography and multilayer coating defects on reflective masks for soft x-ray/EUV projection lithography, 0000 (24 June 1993); doi: 10.1117/12.146524
Proc. SPIE 1924, X-ray mask metrology: the development of linewidth standards for x-ray lithography, 0000 (24 June 1993); doi: 10.1117/12.146525
Proc. SPIE 1924, Properties of thin SiC membrane for x-ray mask, 0000 (24 June 1993); doi: 10.1117/12.146526
Proc. SPIE 1924, Accelerated radiation damage testing of x-ray mask membrane materials, 0000 (24 June 1993); doi: 10.1117/12.146527
Electron-Beam Lithography: Manufacturing
Proc. SPIE 1924, Achieving superior MEBES performance through the use of SPC programs and state-of-the-art facilities, 0000 (24 June 1993); doi: 10.1117/12.146528
Proc. SPIE 1924, Comparative study of MEBES III and CORE 2564 performance in a manufacturing environment, 0000 (24 June 1993); doi: 10.1117/12.146529
Proc. SPIE 1924, Optimization of low-voltage electron optics, 0000 (24 June 1993); doi: 10.1117/12.146530
X-Ray Lithography: Integration
Proc. SPIE 1924, Development of a polycapillary collimator for point-source x-ray lithography, 0000 (24 June 1993); doi: 10.1117/12.146531
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