24 June 1993 0.35-um rule, high-density, full-chip x-ray mask patterning
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Abstract
We study the dimensional and placement accuracies of masks for X-ray lithography, using a 64 Mbit DRAM as an example. We describe a way to stabilize and control X-ray absorber, and reduce stress induced distortion to within 0.03 micrometers . We improve the accuracy of e- beam writing which takes several hours by automatically calibrating the e-beam deflector periodically and by using a ceramic mask-holder. Placement accuracy was within 0.1 micrometers over a 40 mm square with a 2 hour exposure. We demonstrated that in chip areas with highly regular size and periodicity, we can correct for the proximity effect using only size shifts. In chip areas without high regularity, we used dose correction based on a double-gaussian proximity effect function and improved dimensional accuracy.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuo Chijimatsu, Tatsuo Chijimatsu, Ken'ichi Kawakami, Ken'ichi Kawakami, Masafumi Nakaishi, Masafumi Nakaishi, Kazuaki Kondo, Kazuaki Kondo, Masaaki Nakabayashi, Masaaki Nakabayashi, Masaki Yamabe, Masaki Yamabe, Kenji Sugishima, Kenji Sugishima, } "0.35-um rule, high-density, full-chip x-ray mask patterning", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146521; https://doi.org/10.1117/12.146521
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