Absorber roughness effect in XRL image formation

Jerry Z.Y. Guo; Franco Cerrina

doi:10.1117/12.146515

24 June 1993 Absorber roughness effect in XRL image formation

Jerry Z.Y. Guo, Franco Cerrina

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146515
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The effect of absorber sidewall roughness on image formation in proximity X-ray lithography is studied based on simulation of the propagation of X-rays within the absorber and the diffraction of light over a proximity gap. We conclude that the absorber sidewall roughness only causes very small linewidth variation and it has the positive effect of suppressing ghost lines because of the reduction of high frequency components in the input field, which is especially important for opaque features.

Citation Download Citation

Jerry Z.Y. Guo and Franco Cerrina "Absorber roughness effect in XRL image formation", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146515

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