Paper
24 June 1993 Chemically assisted focused-ion-beam etching for tungsten x-ray mask repair
Lloyd R. Harriott, R. R. Kola, George K. Celler
Author Affiliations +
Abstract
Finely focused ion beams have been used for repair of defects in photomasks and X-ray masks either by sputter removal of excess absorber material or by deposition of new absorber material. These mask structures employ polycrystalline metal absorbers with grain sizes in the 0.1 micrometers range. As feature dimensions are pushed downward, the effects of these grains become more important. A great deal of roughness can occur during FIB sputter removal of excess absorber for defect repair due to ion channeling and the resulting spatially nonuniform sputtering. In this paper, we describe a method for reducing the roughness in defect repair for Tungsten X-ray masks using chemically assisted FIB etching and a Cr/W/Cr multilayer mask structure.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lloyd R. Harriott, R. R. Kola, and George K. Celler "Chemically assisted focused-ion-beam etching for tungsten x-ray mask repair", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146534
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Cited by 1 scholarly publication.
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KEYWORDS
Etching

Tungsten

Ion beams

X-rays

Chromium

Photomasks

Sputter deposition

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