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24 June 1993 EBES4: performance of a new e-beam reticle generator
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Abstract
Performance specifications, electron gun parameters, selected testing results, and calculated throughput are presented for the second prototype EBES4 which is entering manufacture. The thermal field emitter electron gun is designed for high flux, high current stability, and a long lifetime. The gun produces 250 nA into a 125 nm diameter spot for a flux of 2000 A/cm2 with a beam current drift of < 0.5%/hour. Minimum address size for EBES4 patterns is 1/64th micrometers (15.6 nm). Butting patterns and MARKET arrays were written at a frequency of approximately 200 MHz in Shipley SAL601 ER7 resist and approximately 100 MHz in AZ5206 resist. EBES4 measurements of x and y butting and shear errors for the 256 micrometers stripe and 32 micrometers subfield boundaries indicated an accuracy (mean + 3 (sigma) ) for multi-point alignment of three masks was measured as <EQ 50 nm with a maximum error of 27 nm. Line size data has been obtained for patterns written in SAL601 resist at 250 MHz and indicated a deviation from target size of <EQ 50 nm for dense-packed lines from 0.75 micrometers to 10.00 micrometers . The average offset between horizontal and vertical lines was < 25 nm. Shipley SAL605 resist has been exposed with writing frequencies up to 450 MHz without loss of pattern integrity. Calculated throughput for a simulated 16 Mbit DRAM reticle indicated write times of 30 minutes/level are attainable with typical resists (approximately 3 (mu) C/cm2) and a reduction in stage overhead.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Darryl Peters, D. C. Fowlis, C. M. Rose, A. R. von Neida, Herbert A. Waggener, and William P. Wilson "EBES4: performance of a new e-beam reticle generator", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146505
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