The effects of electron beam energy, pattern size, and resist thickness on the production of features in electron beam lithography has been investigated. The minimum electron beam energy required to produce features in films of palladium acetate ranging in thickness from 0.09 to 1.9 micrometers has been determined using beam energies ranging from 1 to 30 keV. For each of the film thicknesses, the minimum electron beam energy required to produce features was found to be closely related to the range of the electron relative to the film thickness. The pattern used to obtain these measurements consisted of a group of various sized squares. The dose required to correctly expose the squares so that the actual width was equal to the nominal width varied as the nominal width was changed within the pattern. This change in dose as the nominal width was varied, the dose factor, was used as a measure of the proximity effect. For a given pattern size, the dose factor was found to go through a maximum as the beam energy was raised above the minimum required energy. The width variance, the change in actual width of the squares as the dose was changed, was also found to go through a maximum as the beam energy was raised. As the size of the pattern was varied, the beam energies which resulted in the maximum of the dose factor and the width variance were found to be dependent on the range of the electrons relative to the size of the pattern.