24 June 1993 Effects of illumination system aberrations on proximity XRL images
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Abstract
The aberrations of a typical condenser system for proximity X-ray lithography are obtained through ray-tracing and their effect on the overlay and linewidth control is analyzed. The main effect of the illumination systems aberrations is run-out error due to the slope of the wavefront aberration and the error is of the order of 2 nm.
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Jerry Z.Y. Guo, Jiabei Xiao, Franco Cerrina, Whitson G. Waldo, "Effects of illumination system aberrations on proximity XRL images", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146516; https://doi.org/10.1117/12.146516
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