24 June 1993 Effects of illumination system aberrations on proximity XRL images
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The aberrations of a typical condenser system for proximity X-ray lithography are obtained through ray-tracing and their effect on the overlay and linewidth control is analyzed. The main effect of the illumination systems aberrations is run-out error due to the slope of the wavefront aberration and the error is of the order of 2 nm.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerry Z.Y. Guo, Jiabei Xiao, Franco Cerrina, Whitson G. Waldo, "Effects of illumination system aberrations on proximity XRL images", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146516; https://doi.org/10.1117/12.146516

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