24 June 1993 Suppression of resist heating effect by multiple electron-beam exposure on GaAs substrates
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Abstract
The multiple exposure technique in electron beam (EB) lithography has been studied from standpoints of resist sensitivity, contrast, dissolution rate, linewidth and edge roughness delineating 0.1 micrometers pattern on the resist. The increase of the dissolution rate, the improvement of the sensitivity and the change in the contrast have been observed in multiple exposure. These phenomena, which are different from the case of Variable-shaped EB lithography, are considered to be caused by the suppression of thermal crosslinking.
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Hiroyuki Minami, Hirofumi Nakano, Kazuhiko Sato, Hirozo Takano, "Suppression of resist heating effect by multiple electron-beam exposure on GaAs substrates", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146506; https://doi.org/10.1117/12.146506
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