What is required for collimated point-source x-ray lithography to achieve an economically viable throughput?

Edward D. Franco; Michael J. Boyle; Jonathan A. Kerner; Louis N. Koppel; Robert D. Ormond

doi:10.1117/12.146520

24 June 1993 What is required for collimated point-source x-ray lithography to achieve an economically viable throughput?

Edward D. Franco, Michael J. Boyle, Jonathan A. Kerner, Louis N. Koppel, Robert D. Ormond

Author Affiliations +

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146520
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The wafer throughput performance of collimated point-source proximity x-ray lithography was evaluated for features sizes that range from 0.1 to 0.25 micrometers . We analyzed the performance of parabolic collimating optics that rely on multilayer coatings for their x-ray reflection properties. The resulting x-ray transport properties of the collimator were then used to simulate the performance of a lithography system that incorporated a laser produced plasma x-ray source, a lithographic mask, photoresist, and staging subsystems. These system studies make it clear that modest advances in source intensity, mask technology, and photoresist sensitivity are required for point source proximity x-ray lithography to achieve economically viable wafer throughputs of 50 six-inch wafer levels per hour.

Citation Download Citation

Edward D. Franco, Michael J. Boyle, Jonathan A. Kerner, Louis N. Koppel, and Robert D. Ormond "What is required for collimated point-source x-ray lithography to achieve an economically viable throughput?", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146520

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