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15 September 1993 Chemical amplification positive deep-UV resist using partially tetrahydropyranyl-protected polyvinylphenol
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Abstract
Chemical amplification positive resists using tetrahydropyranyl-protected polyvinylphenol (THP-M) were investigated for deep UV lithography. Infrared spectroscopy measurements showed that THP-M in the resist film cannot be completely deprotected by photo-generated acid. This causes a poor developability of the resist containing highly tetrahydropyranyl (THP)-protected polyvinylphenol in an aqueous base developer. In order to improve the developability in the pure aqueous base developer, we utilized partially THP-protected polyvinylphenol. To determine the optimum protection degree, we examined the relation between the dissolution rate of THP-M films and THP-protection degree in developers. A resist formulated from 20% THP-protected polyvinylphenol and bis(tert-butylphenyl)iodonium triflate resolved 0.30 micrometers line-and-space patterns with the aqueous base development using a KrF excimer laser stepper with a dose of 46 mJ/cm2.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Hattori, Leo Schlegel, Akira Imai, Nobuaki Hayashi, and Takumi Ueno "Chemical amplification positive deep-UV resist using partially tetrahydropyranyl-protected polyvinylphenol", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154747
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