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15 September 1993 Delay-time effects between exposure and post-exposure bake in acetal-based deep-UV photoresists
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This paper presents some methods for the investigation of delay time I3 induced effects typical of an advanced acetal-based photoresist, and strategies to improve the latent image stability. Dissolution rate monitoring was used to investigate the increasing formation of a surface inhibition layer with extended intervals I3. The impact of certain additives, the application of a protective coating (AZR Aquatar), and modified process conditions on the inhibition layer were studied in detail. The photoacid induced acetal cleavage was monitored by UV-spectroscopy (248 nm). Upon KrF excimer laser irradiation the resist absorbance increases, due to the progressing formation of a strongly absorbing aldehyde fragment. SEM pictures confirm a linear relationship between the efficiency of the acetal cleavage and acid diffusion into unexposed resist areas. Acid evaporation during PEB was determined by a novel method, the so-called Sandwich `Blue' Test. Interpretations of the experimental results and some optimization strategies are given.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Horst Roeschert, Charlotte Eckes, Hajime Endo, Yoshiaki Kinoshita, Takanori Kudo, Seiya Masuda, Hiroshi Okazaki, Munirathna Padmanaban, Klaus Juergen Przybilla, Walter Spiess, Natusmi Suehiro, Horst Wengenroth, and Georg Pawlowski "Delay-time effects between exposure and post-exposure bake in acetal-based deep-UV photoresists", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993);

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