15 September 1993 Delay-time stable chemically amplified deep-UV resist
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Abstract
This paper describes a newly developed acetal-based positive tone deep UV photoresist called DX 46. The material consists of a 4-hydroxystyrene/4-hydroxy-3-methylstyrene copolymer, a polymeric dissolution inhibitor, and a bleachable diazo-photoactive compound. Each of the three compounds is specially designed to fit to each other for high performance sub-halfmicron resolution. The main idea is the use of a poly-N,O-acetal for dissolution inhibition which undergoes efficient acid catalyzed bond cleavage that produces strong dissolution promoting fragments in the exposed area. We determined the activation energy for hydrolysis reaction of our polyacetal to be 10 Kcal/mol. The radiation induced acid catalyzed hydrolysis reaction starts right after exposure and is accomplished by a mild post exposure bake at low temperature. This resist system is not sensitive to airborne contamination and no charcoal filtered air or diffusion barrier top coats are necessary for T-top free performance.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Klaus Juergen Przybilla, Klaus Juergen Przybilla, Yoshiaki Kinoshita, Yoshiaki Kinoshita, Takanori Kudo, Takanori Kudo, Seiya Masuda, Seiya Masuda, Hiroshi Okazaki, Hiroshi Okazaki, Munirathna Padmanaban, Munirathna Padmanaban, Georg Pawlowski, Georg Pawlowski, Horst Roeschert, Horst Roeschert, Walter Spiess, Walter Spiess, Natusmi Suehiro, Natusmi Suehiro, } "Delay-time stable chemically amplified deep-UV resist", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154803; https://doi.org/10.1117/12.154803
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