Evaluation of a 193-nm resist and imaging system

Donald W. Johnson; David J. Elliott

doi:10.1117/12.154776

15 September 1993 Evaluation of a 193-nm resist and imaging system

Donald W. Johnson, David J. Elliott

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154776
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

This paper describes the use of a 193 nm surface imaging resist in a new small-field, deep-UV projection exposure system. The 193 nm surface imaging technology utilizes commercial photoresists, in conjunction with a small field step-and-repeat exposure system. Typical processing characteristics of the imaging chemistry are presented, along with a detailed description of the projection exposure system. The resist uses vapor phase silylation with oxygen RIE developing and has been shown to provide wide focus latitude and better than 0.2 micrometers resolution. The imaging system uses a catadioptric lens with 0.5 NA for 0.20 images.

Citation Download Citation

Donald W. Johnson and David J. Elliott "Evaluation of a 193-nm resist and imaging system", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154776

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