Evaluation of a deep-UV bilayer resist for sub-half micron lithography

William R. Brunsvold; Kevin J. Stewart; Premlatha Jagannathan; Ratnam Sooriyakumaran; J. Parrill; Karl Paul Muller; Harbans S. Sachdev

doi:10.1117/12.154772

15 September 1993 Evaluation of a deep-UV bilayer resist for sub-half micron lithography

William R. Brunsvold, Kevin J. Stewart, Premlatha Jagannathan, Ratnam Sooriyakumaran, J. Parrill, Karl Paul Muller, Harbans S. Sachdev

Author Affiliations +

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154772
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

A chemically amplified silicon-containing resist has been formulated and evaluated as a thin imaging layer in a positive tone deep UV (DUV) bilayer scheme. The key component is a silicon-containing polymer which has been characterized by GPC, UV, and dissolution rate studies. Dose and focus latitudes were determined for 0.4 and 0.5 micrometers patterns exposed on a SVGL Micrascan I step and scan system and on KrF excimer laser steppers. The dose latitude on a GCA (0.35 NA) excimer was found to be 20% for 0.4 micrometers features and about 30% for 0.5 micrometers features (+/- 10% CD variation). Focus latitude was at least 2 micrometers for 0.5 micrometers patterns. Wafer to wafer LW uniformity as well as within water uniformity is shown. Typical processing involves 5 - 10 mJ/cm² exposure doses, employing a 90 degree(s)C post-expose bake (PEB) and a 60 sec 0.21 N TMAH develop. The dependence of linewidth upon PEB was found to be about 13 nm per degree C for 0.5 micrometers features. Pattern transfer into the hardbaked i-line resist underlayer was done in an MLR chamber on an AME 5000. A low pressure etch is preferred to eliminate residue but this can lead to a higher non-uniformity across the wafer. Sidewall roughness was prevalent and this could be partially attributed to `feet' on the silicon-containing imaging layer.

Citation Download Citation

William R. Brunsvold, Kevin J. Stewart, Premlatha Jagannathan, Ratnam Sooriyakumaran, J. Parrill, Karl Paul Muller, and Harbans S. Sachdev "Evaluation of a deep-UV bilayer resist for sub-half micron lithography", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154772

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available