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15 September 1993 Evaluation of a new zirconium-containing, negative-working, single-layer resist with enhanced oxygen and fluorocarbon reactive-ion etch resistance
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Abstract
Resists for use in electron beam lithography usually have been made using polymers alone, or polymers with monomeric additives. The monomer may perform the role of a plasticizer or a sensitizer to radiation or enhance the reactive-ion resistance of the imaged resist. In the present work, a new approach was used. A negative working resist system containing two monomers, zirconyl dimethacrylate (ZrDMA) and dipentaerythritol pentaacrylate (DPEPA), was lithographically evaluated. The DPEPA acts as a sensitizer to electron beam radiation by enhancing exposure-induced crosslinking, while the presence of zirconium in the form of an organometallic results in the formation of an oxide based barrier to etch in oxygen and CF4/O2 plasmas. This results in a drop in the etch rate with time in situ.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ashwin S. Ramachandran, Treva Long, and Ferdinand Rodriguez "Evaluation of a new zirconium-containing, negative-working, single-layer resist with enhanced oxygen and fluorocarbon reactive-ion etch resistance", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154775
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