Paper
15 September 1993 High-resolution pattern formation featuring excellent dimension correlation by enhanced wettability development technology
Shigeki Shimomura, Hisayuki Shimada, Rita Au, Mamoru Miyawaki, Tadahiro Ohmi
Author Affiliations +
Abstract
We have demonstrated that the addition of surfactant to developer results in (1) the resolution of the contact holes as small as 0.30 micrometers with good dimension correlation, (2) an increase in the depth of focus at the minimum feature size, and (3) a reduction in the exposure energy needed to form fine patterns. The surfactant enhances the wettability of the developer to the photoresist, thus promoting dissolution of the photoresist, especially in narrow spaces such as contact holes. The optimal surfactant concentration in the developer performs superior development characteristics. In addition, we also demonstrate the effect of the molecular structure of surfactant on development performance.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeki Shimomura, Hisayuki Shimada, Rita Au, Mamoru Miyawaki, and Tadahiro Ohmi "High-resolution pattern formation featuring excellent dimension correlation by enhanced wettability development technology", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154796
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KEYWORDS
Photoresist developing

Photoresist materials

Polymers

Scanning electron microscopy

Oxides

Semiconducting wafers

Molecules

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