15 September 1993 Modeling of silylated resist profile in DESIRE process
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Abstract
In DESIRE process, silylation is probably the most critical step since the final resist profiles are mainly determined by the Si distribution between the exposed and unexposed areas of the upper part of the resist. In the past, the silylation contrast was used to predict the silylation profile for a given silylation condition. In this paper, a new method to calculate the silylation profile is presented. A new module is added in ANKAN simulator to predict the silylated profile using this method. Extensive simulation was carried out for a one dimensional line space object under various process conditions. Change in silylation depth at the center and corner of the line has been computed to study the effect of aerial image on silylation profile for both PLASMASK 200G and 301U photoresists.
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Bhvanesh P. Mathur, Bhvanesh P. Mathur, Khalil I. Arshak, Khalil I. Arshak, Jules Braddell, Jules Braddell, D. McDonough, D. McDonough, Arousian Arshak, Arousian Arshak, } "Modeling of silylated resist profile in DESIRE process", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154801; https://doi.org/10.1117/12.154801
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