15 September 1993 Negative DUV photoresist for 16Mb-DRAM production and future generations
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This paper discusses a new negative tone aqueous base developable photoresist that has demonstrated excellent sub-half micron resolution with commercially available DUV (deep ultraviolet) exposure systems. This system which consists of a phenolic resin (pHOST), a glycoluril crosslinker (TMMGU), and a triflic acid generating material is currently in use for the manufacturing of 16 M b-DRAM and related CMOS logic technology. We provide supporting manufacturing data relating to our experiences with this program, along with the benefits realized by the implementation of a negative tone photoresist system.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Will Conley, William R. Brunsvold, Richard A. Ferguson, Jeffrey D. Gelorme, Steven J. Holmes, Ronald M. Martino, Magda Petryniak, Paul A. Rabidoux, Ratnam Sooriyakumaran, John L. Sturtevant, "Negative DUV photoresist for 16Mb-DRAM production and future generations", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154744; https://doi.org/10.1117/12.154744

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