Plasma deposition, characterization, and photochemistry of organosilicon hydride network polymers: versatile resists for all-dry mid-deep UV photolithography

Timothy W. Weidman; Ajey M. Joshi

doi:10.1117/12.154746

15 September 1993 Plasma deposition, characterization, and photochemistry of organosilicon hydride network polymers: versatile resists for all-dry mid-deep UV photolithography

Timothy W. Weidman, Ajey M. Joshi

Author Affiliations +

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154746
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Plasma polymerization of various mono- and di-substituted organosilanes (R¹R²SiH₂; R¹ equals alkyl, aryl and R² equals H or alkyl) provides an effective approach to a new class of organosilicon resists useful in all dry photolithographic processing. For example, parallel plate rf plasma deposition systems may be used to deposit photosensitive films from low power discharges in methylsilane (MeSiH₃) gas between 200 and 500 mTorr. Characterization by FTIR, UV-Visible, and NMR spectroscopy suggests that methylsilane undergoes predominantly dehydrogenative coupling reactions, giving Si-Si bonded network materials of general composition [(Me_xSiH_y)_n], with x and y between 0.5 and 1.0. Such films exhibit intense, near-UV absorption band edges characteristic of materials with Si-Si backbones, and undergo photo-oxidative crosslinking with bleaching when irradiated with mid-deep UV light ((lambda) < 365 nm) in the presence of oxygen.

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Timothy W. Weidman and Ajey M. Joshi "Plasma deposition, characterization, and photochemistry of organosilicon hydride network polymers: versatile resists for all-dry mid-deep UV photolithography", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154746

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