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15 September 1993 Positive chemically amplified resist for deep-UV lithography
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Abstract
A novel approach to chemically amplified resists based on the `base cleavage' mechanism where t-boc groups serve as the imaging units and acetoxy functionalities provide solubility differential between the exposed and unexposed resist areas was realized with poly(4- acetoxystyrene-4-t-butoxycarbonyloxystyrene sulfone, PASTBSS) terpolymer based resist formulations. The acidolytic cleavage of t-boc groups occurs in both the poly(4- acetoxystyrene-4-t-butoxycarbonyloxystyrene, PASTBS) copolymer and poly(4- acetoxystyrene-4-t-butoxycarbonyloxystyrene sulfone, PASTBSS) terpolymer resist formulations but the base induced acetyl removal occurs in the solid state (in the film) only in the PASTBSS resists, indicating the need for sulfur dioxide in the polymer backbone. Not surprisingly, acetoxy groups can be removed in solution from both PASTBS and PASTBSS polymers or their t-boc deprotected analogs.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Omkaram Nalamasu, Allen G. Timko, May Cheng, Janet M. Kometani, Mary E. Galvin-Donoghue, Sharon A. Heffner, Sydney G. Slater, Andrew J. Blakeney, Norbert Muenzel, Reinhard Schulz, Heinz E. Holzwarth, Carlo Mertesdorf, and Hans-Thomas Schacht "Positive chemically amplified resist for deep-UV lithography", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154748
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