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15 September 1993 Simulation of spray/puddle resist development
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This work describes how spray/puddle development can be simulated using two separate sets of dissolution rate parameters. The first set of values is derived under continuous spray conditions and represents the wetting, or `spray,' period of the process; the second set, derived during stationary puddle development, deals with the remaining process period. The validity of decoupling the two development stages is supported by the good agreement between SAMPLE simulations and experimental results. Process windows and clearing doses are calculated and measured for a fixed time development process, as the spray to puddle time ratio is reduced from one to zero.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stewart A. Robertson, J. Tom M. Stevenson, Robert J. Holwill, Steven G. Hansen, Rodney J. Hurditch, Mark Thirsk, and Ivan S. Daraktchiev "Simulation of spray/puddle resist development", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993);

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