Postexposure bake as a process-control parameter for chemically amplified photoresist

John L. Sturtevant; Steven J. Holmes; Theodore G. Van Kessel; Philip C. D. Hobbs; Jerry C. Shaw; Robert R. Jackson

doi:10.1117/12.149018

4 August 1993 Postexposure bake as a process-control parameter for chemically amplified photoresist

John L. Sturtevant, Steven J. Holmes, Theodore G. Van Kessel, Philip C. D. Hobbs, Jerry C. Shaw, Robert R. Jackson

Proceedings Volume 1926, Integrated Circuit Metrology, Inspection, and Process Control VII; (1993) https://doi.org/10.1117/12.149018
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

A new method is described for the real-time in-line control of critical dimensions for positive- tone chemically amplified resist systems. The technique relies on the generation of a diffraction grating in the resist film when a latent image appears during the post-exposure bake. A simple optical illumination/collection arrangement allows the diffracted signal to be measured during the post-exposure bake. This signal can be correlated to linewidths when measured by a non-destructive SEM. The result is a post-exposure bake time that can be used to correct for exposure-and-bake temperature variations to conveniently provide overall process control. Results generated by a prototype system are presented for a variety of 0.5- micrometers mask levels and process conditions.

Citation Download Citation

John L. Sturtevant, Steven J. Holmes, Theodore G. Van Kessel, Philip C. D. Hobbs, Jerry C. Shaw, and Robert R. Jackson "Postexposure bake as a process-control parameter for chemically amplified photoresist", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); https://doi.org/10.1117/12.149018

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