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4 August 1993 Recent developments in stepper-focus and overlay-control metrology for sub-half-micron manufacturing applications
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Abstract
Current generation of advanced IC's require sub-half-micron-resolution photolithography over large exposure fields, with device overlay tolerances of less than 100 nanometers. Achieving this performance in high-volume manufacturing will challenge the focus and overlay control capabilities of optical reduction steppers. This paper presents new metrological approaches to achieving the required focus and overlay control performance. A latent image focus measurement technique is described, which has been used extensively to characterize die levelling performance. To improve overlay capability on back end levels (especially metal), a combined bright field/dark field alignment system has been developed. Data on alignment performance, and optimization of alignment mark design for bright field, will be presented.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard F. Hollman, Paul M. Bischoff, and Paul Hellebrekers "Recent developments in stepper-focus and overlay-control metrology for sub-half-micron manufacturing applications", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148934; https://doi.org/10.1117/12.148934
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