4 August 1993 SEM inspection methods for process development and manufacturing of a 0.25-μm T-gate GaAs MESFET fabrication
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Abstract
Several SEM inspection techniques for the process development of a 0.25 micrometers T-gate MESFET process have been successfully utilized. The transition of these techniques to a manufacturing process with SPC monitoring will also be discussed. The unique challenges of imaging several different Ebeam resists, and their interaction with the scanning electron microscope will also be discussed.
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Bret A. Small, Bret A. Small, Rick D. Hudgens, Rick D. Hudgens, Shirley A. Meyer, Shirley A. Meyer, } "SEM inspection methods for process development and manufacturing of a 0.25-μm T-gate GaAs MESFET fabrication", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148948; https://doi.org/10.1117/12.148948
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