4 August 1993 Utilizing diffraction imaging for nondestructive wafer topography measurements
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Real-time process monitoring has been a primary concern of the semiconductor industry for a number of years. In an attempt to provide higher yield and performance it has become accepted that the monitoring of the etch step is critical. This is the primary motivation for the development of a real time process monitor with particular attention paid to wafer monitoring at the surface. To this end, the use of the results of diffraction, in particular, diffraction from 3-dimensional gratings is proving to be a viable technique for real time, process monitoring. Thus, the primary focus of this paper is to present the progress made toward the development of a non destructive, real time, optical metrology based system for direct wafer monitoring, utilizing the results of diffraction from a grating structure. The results of experiment and simulation will also be discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tim M. Morris, Tim M. Morris, Dennis S. Grimard, Dennis S. Grimard, Chiao-Fe Shu, Chiao-Fe Shu, Fred Lewis Terry, Fred Lewis Terry, Michael E. Elta, Michael E. Elta, Ramesh C. Jain, Ramesh C. Jain, "Utilizing diffraction imaging for nondestructive wafer topography measurements", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148964; https://doi.org/10.1117/12.148964

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