Chromeless phase mask by resist silylation for i-line lithography

Lothar Bauch; Joachim J. Bauer; Monika Boettcher; Ulrich Haak; Wolfgang W. Hoeppner; Georg G. Mehliss

doi:10.1117/12.150461

8 August 1993 Chromeless phase mask by resist silylation for i-line lithography

Lothar Bauch, Joachim J. Bauer, Monika Boettcher, Ulrich Haak, Wolfgang W. Hoeppner, Georg G. Mehliss

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150461
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The generation of the required phase difference is made by silylation of a novolak based resist using the swelling of the exposed resist. The contrast and the image transfer of these kinds of transparent masks are calculated by simulation. Results of optical image transfer using this phase mask are presented and discussed. The high resolution of 0.3 micrometers for a simple i- line technique is demonstrated by SEM micrographs.

Citation Download Citation

Lothar Bauch, Joachim J. Bauer, Monika Boettcher, Ulrich Haak, Wolfgang W. Hoeppner, and Georg G. Mehliss "Chromeless phase mask by resist silylation for i-line lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150461

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available