8 August 1993 Chromeless phase mask by resist silylation for i-line lithography
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The generation of the required phase difference is made by silylation of a novolak based resist using the swelling of the exposed resist. The contrast and the image transfer of these kinds of transparent masks are calculated by simulation. Results of optical image transfer using this phase mask are presented and discussed. The high resolution of 0.3 micrometers for a simple i- line technique is demonstrated by SEM micrographs.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lothar Bauch, Lothar Bauch, Joachim J. Bauer, Joachim J. Bauer, Monika Boettcher, Monika Boettcher, Ulrich Haak, Ulrich Haak, Wolfgang W. Hoeppner, Wolfgang W. Hoeppner, Georg G. Mehliss, Georg G. Mehliss, } "Chromeless phase mask by resist silylation for i-line lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150461; https://doi.org/10.1117/12.150461

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