8 August 1993 Experiment and simulation of sub-0.25-μm resist processes for 193-nm lithography
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Abstract
A model was developed to simulate the behavior of near-surface-imaged resist processes, with the emphasis on modeling of resist processes for 193 nm. Silylation, bilayer, and additive resist processes can all be simulated using this model. For the silylation process, the model was found to be in excellent agreement with experimentally observed silylated resist profiles. This model was used in combination with existing programs that calculate aerial images and single-layer resist profiles to predict process margins for 193 nm (0.5 NA) lithography. The results of our simulations for 0.25 micrometers features indicate a depth of focus comparable to the Rayleigh limit (+/- 0.4 micrometers ) for a single-layer resist process and up to two times this value for near-surface-imaged resists. Focus latitudes greater than the Rayleigh limit are predicted for 0.18 micrometers features when using near-surface-imaged resists in conjunction with annular illumination.
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Roderick R. Kunz, Roderick R. Kunz, Mark A. Hartney, Mark A. Hartney, Richard W. Otten, Richard W. Otten, Eytan Barouch, Eytan Barouch, Uwe Hollerbach, Uwe Hollerbach, } "Experiment and simulation of sub-0.25-μm resist processes for 193-nm lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150444; https://doi.org/10.1117/12.150444
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