8 August 1993 I-line lithography for subhalf-micron design rules
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I-line lithography, together with single-layer resist processes, practically, have been limited to 0.45 micrometers design rules in the semiconductor industry. For design rules of 0.4 micrometers and below, several contrast enhanced methods have been proposed for i-line lithography, mainly phase shift masks, modified illumination methods, and surface imaging techniques, etc. This paper describes the sub-half micron process performance of 0.48 NA and 0.54 i-line steppers on various topography wafers which are suitable for 0.35 - 0.40 micrometers and 0.40 - 0.45 micrometers design rules. The latest high performance i-line resist and high contrast developing scheme have been chosen for this study. The process windows for the sub-half micron features on various topography wafers are reported. The feasibility to use these processes for the production with lower K1 is also addressed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Barton A. Katz, Barton A. Katz, Leif R. Sloan, Leif R. Sloan, James Foster, James Foster, Richard Rogoff, Richard Rogoff, Ronfu Chu, Ronfu Chu, Daniel Hao-Tien Lee, Daniel Hao-Tien Lee, "I-line lithography for subhalf-micron design rules", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150434; https://doi.org/10.1117/12.150434

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