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8 August 1993 Intensity optimization for phase-shifting masks
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Abstract
The creation of stable, defect free, and correctly biased phase shifting masks (PSMs) is a difficult task. The behavior of PSMs, with their complicated structures and topographies, is highly sensitive to process parameters. A method of equalizing the intensity transmission by applying a wet etchant to the reticle and etching back both shifted and unshifted openings has been proposed. The etchback is used to reduce or alter the sidewall light scattering effects, leading to intensity equalization. The proposed method has been shown to cause intensity equalization for i-line and DUV illuminated alternating PSMs. However, many questions remain about the effective use of this method.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin D. Lucas, Andrzej J. Strojwas, K. K. Low, and Chi-Min Yuan "Intensity optimization for phase-shifting masks", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150442
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