8 August 1993 NA and Σ optimization for high-NA i-line lithography
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NA and (sigma) will be optimized to establish 0.35 micrometers i-line single layer resist process without use of super resolution techniques. Resolution, depth of focus (DOF), and proximity effect are evaluated using a variable NA and (sigma) stepper. NA is varied by an aperture stop in a projection lens. (sigma) is varied by not only an aperture stop (mechanical (sigma) ) in an illumination optics but also intensity distribution of illumination at the aperture stop (effective (sigma) ). Optimized NA and (sigma) are applied to a newly developed high resolution resist. Obtained results show that high NA and high (sigma) stepper has a great availability for 0.35 micrometers device fabrication.
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Koji Yamanaka, Koji Yamanaka, Haruo Iwasaki, Haruo Iwasaki, Hiroshi Nozue, Hiroshi Nozue, Kunihiko Kasama, Kunihiko Kasama, } "NA and Σ optimization for high-NA i-line lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150435; https://doi.org/10.1117/12.150435

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