8 August 1993 New resolution-enhancing mask for projection lithography based on in-situ off-axis illumination
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Abstract
A new technique has been developed for the illumination of a mask in a wafer stepper. A phase-shifting layer (a so-called kinoform) is introduced in the optical path of the projection system between the last lens of the illumination system and the mask absorber. This phase- layer interacts with the incident light in such a way, that the features on the mask get a specific optimized illumination. Therefore the phase distribution has to be generated under consideration of the feature size and distribution on the mask. In that sense a mask feature customized illumination is obtained. In a first application phase, the phase layer is created on the glass side of the mask. Linear as well as chessboard phase gratings are applied. With a chessboard phase grating, a quadrupole-like illumination is generated, which can be optimized to the mask feature distribution by choosing the correct grating frequency, phase-shift and tilt.
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Rainer Pforr, Rainer Pforr, Rik M. Jonckheere, Rik M. Jonckheere, Wolfgang Henke, Wolfgang Henke, Kurt G. Ronse, Kurt G. Ronse, Patrick Jaenen, Patrick Jaenen, Ki-Ho Baik, Ki-Ho Baik, Luc Van den Hove, Luc Van den Hove, } "New resolution-enhancing mask for projection lithography based on in-situ off-axis illumination", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150424; https://doi.org/10.1117/12.150424
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