Photoresist thin-film effects on alignment process capability

Gary E. Flores; Warren W. Flack

doi:10.1117/12.150476

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8 August 1993 Photoresist thin-film effects on alignment process capability

Gary E. Flores, Warren W. Flack

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Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150476
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Two photoresists were selected for alignment characterization based on their dissimilar coating properties and observed differences on alignment capability. The materials are Dynachem OFPR-800 and Shipley System 8. Both photoresists were examined on two challenging alignment levels in a submicron CMOS process, a nitride level and a planarized second level metal. An Ultratech Stepper model 1500 which features a darkfield alignment system with a broadband green light for alignment signal detection was used for this project. Initially, statistically designed linear screening experiments were performed to examine six process factors for each photoresist: viscosity, spin acceleration, spin speed, spin time, softbake time, and softbake temperature. Using the results derived from the screening experiments, a more thorough examination of the statistically significant process factors was performed. A full quadratic experimental design was conducted to examine viscosity, spin speed, and spin time coating properties on alignment. This included a characterization of both intra and inter wafer alignment control and alignment process capability. Insight to the different alignment behavior is analyzed in terms of photoresist material properties and the physical nature of the alignment detection system.

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Gary E. Flores and Warren W. Flack "Photoresist thin-film effects on alignment process capability", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150476

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