8 August 1993 Study of excimer-laser direct-projective lithography
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In our experiments, we have found that the velocity of direct projective lithography is very fast, if excimer laser is used. In the system, we use an XeCl excimer laser (laser wavelength 308 nm, laser bandwidth 1 nm, pulse width 40 ns, and pulse energy 300 mJ/pulse) and a 1:1 catadioptric lens used as the projective lens (with NA: 0.35, field size: 40 mm). Optical resist is AZ 1350 J. The laser energy density on the wafer is 6 mJ/cm2. Exposure dose is 300 mJ/cm2. Through the system, we have not only obtained 1.0 micrometers resolution on 0.6 micrometers thickness resist, but also have studied the damage of Cr film in the direct projective lithography.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haixing Zou, Yudong Zhang, "Study of excimer-laser direct-projective lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150489; https://doi.org/10.1117/12.150489

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