8 August 1993 Three-dimensional lithography cases for exploring technology solutions and benchmarking simulators
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Abstract
Advances in lithography simulation have made three dimensional analysis practical. This has resulted in a need for test structures. Five test structures of increasing topological complexity are proposed and are specified mathematically. The first two have been examined with the SAMPLE-3-D simulator. The first example is a two dimensional Gaussian etch rate extended into the third dimension. The second example is the analysis of side lobe formation in phase shifted masks. Because it is necessary to minimize the effect of the side lobes on resist development, adjusting for the proper resist parameters to accomplish this is important. Third is the formation of standing waves. The proper numerical analysis of the evolution of this structure is difficult for surface based simulators, and therefore important for testing. Fourth, holes in the resist via reflective notching is an effect that is of great importance to technologists and is a difficult problem for simulators due to the formation of holes and tunnels. Fifth is the development of a phase shifted contact cut with significant sidelobes and standing waves. This combines the simulation difficulties encountered in examples two and three, and creates new horn shaped structures to form a particularly difficult geometry problem. The mathematical models for each structure are also listed, and a discussion of the SAMPLE-3-D simulator is included.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John Joseph Helmsen, John Joseph Helmsen, Andrew R. Neureuther, Andrew R. Neureuther, } "Three-dimensional lithography cases for exploring technology solutions and benchmarking simulators", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150438; https://doi.org/10.1117/12.150438
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