10 September 1993 Dielectronic recombination of Li-like Si ion
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Proceedings Volume 1928, International Symposium on Laser-Plasma Interactions; (1993) https://doi.org/10.1117/12.155774
Event: Laser-Plasma Interactions: the International Symposium, 1992, Shanghai, China
The detailed level to level partial dielectronic recombination rate coefficients of Li-like Si ion through 2 pnl manfolds are calculated. These rate coefficients are presented by the average wavelength (lambda) and average absorption oscillator strengths f defined by P. L. Hagelstein. All calculations are made on the basis of Cowan's program (HFR).
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huaguo Teng, Huaguo Teng, Zhizhan Xu, Zhizhan Xu, Baifei Sheng, Baifei Sheng, Wengqi Zhang, Wengqi Zhang, "Dielectronic recombination of Li-like Si ion", Proc. SPIE 1928, International Symposium on Laser-Plasma Interactions, (10 September 1993); doi: 10.1117/12.155774; https://doi.org/10.1117/12.155774

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