Fabrication of high-Tc films on silicon membranes for bolometric detectors

R. Parsons

doi:10.1117/12.2298131

14 December 1992 Fabrication of high-Tc films on silicon membranes for bolometric detectors

R. Parsons

Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 19290E (1992) https://doi.org/10.1117/12.2298131
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States

Abstract

Since the discovery of high-Tc superconductors work has been underway to use such materials for the development of bolometric devices for the detection of infrared and far infrared radiation.12 In this paper we are concerned with ways in which Bi-Sr-Ca-Cu-O and Y-Ba-Cu-O high-Tc films can be deposited onto silicon membranes for the fabrication of transition edge bolometers. Our calculations show that a high-Tc film on a 3 pm thick silicon membrane can provide bolometric detection of infrared radiation with D* > 3 x 109 cm Hz1/2/W and time constant < .1 msec. Prototype detectors with membrane thicknesses in the range from 7 pm to 25 pm membrane thicknesses have been fabricated with Bi-Sr-Ca-Cu-O and Y-Ba-Cu-O high- Tc superconductors.

Citation Download Citation

R. Parsons "Fabrication of high-Tc films on silicon membranes for bolometric detectors", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19290E (14 December 1992); https://doi.org/10.1117/12.2298131

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